silicon pin photodiode, rohs compliant www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81503 338 rev. 1.7, 16-sep-08 BPV10NF vishay semiconductors description BPV10NF is a pin photodiode with high speed and high radiant sensitivity in black, t-1? plastic package with daylight blocking filter. filter bandwidth is matched with 870 nm to 950 nm ir emitters. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? leads with stand-off ? radiant sensitive area (in mm 2 ): 0.78 ? high radiant sensitivity ? daylight blocking filter matched with 870 nm to 950 nm emitters ? high bandwidth: > 100 mhz at v r = 12 v ? fast response times ? angle of half sensitivity: ? = 20 ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? high speed detector for infrared radiation ? infrared remote control and free air data transmission systems, e.g. in combinat ion with tsffxxxx series ir emitters note test condition see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 16140-1 product summary component i ra (ma) ? (deg) 0.5 (nm) BPV10NF 60 20 790 to 1050 ordering information ordering code packaging remarks package form BPV10NF bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient connected with cu wire, 0.14 mm 2 r thja 350 k/w
document number: 81503 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.7, 16-sep-08 339 BPV10NF silicon pin photodiode, rohs compliant vishay semiconductors note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 1.0 1.3 v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 20 v, e = 0 i ro 15na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 11 pf open circuit voltage e e = 1 mw/cm 2 , = 870 nm v o 450 mv short circuit current e e = 1 mw/cm 2 , = 870 nm i k 50 a reverse light current e e = 1 mw/cm 2 , = 870 nm, v r = 5 v i ra 55 a e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 30 60 a temperature coefficient of i ra e e = 1 mw/cm 2 , = 870 nm, v r = 5 v tk ira - 0.1 %/k absolute spectral sensitivity v r = 5 v, = 870 nm s( ) 0.55 a/w angle of half sensitivity ? 20 deg wavelength of peak sensitivity p 940 nm range of spectral bandwidth 0.5 790 to 1050 nm quantum efficiency = 950 nm 70 % noise equivalent power v r = 20 v, = 950 nm nep 3 x 10 -14 w/ hz detectivity v r = 20 v, = 950 nm d* 3 x 10 12 cm hz/w rise time v r = 50 v, r l = 50 , = 820 nm t r 2.5 ns fall time v r = 50 v, r l = 50 , = 820 nm t f 2.5 ns 20 40 60 8 0 1 10 100 1000 i ro - re v erse dark c u rrent (na) t am b - am b ient temperat u re (c) 100 94 8 436 v r = 20 v 0204060 8 0 0.6 0. 8 1.0 1.2 1.4 i ra rel - relati v e re v erse light c u rrent t am b - am b ient temperat u re (c) 100 94 8 621 v r = 5 v e e =1 m w /cm 2 = 8 70 nm
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81503 340 rev. 1.7, 16-sep-08 BPV10NF vishay semiconductors silicon pin photodiode, rohs compliant fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sensitivity vs. angular displacement 0.01 0.1 1 0.1 1 10 100 1000 i ra - re v erse light c u rrent ( a) e e - irradiance (m w /cm2) 10 94 8 622 v r = 5 v = 8 70 nm 0.1 1 10 1 10 100 v r - re v erse v oltage ( v ) 100 94 8 623 i ra - re v erse light c u rrent ( a) 1m w /cm 2 0.5 m w /cm 2 0.2 m w /cm 2 0.1 m w /cm 2 0.05 m w /cm 2 0.02 m w /cm 2 = 8 70 nm 0 2 4 6 8 12 10 0.1 1 10 c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 100 94 8 439 e = 0 f = 1 mhz 94 8 426 s( ) rel - relati v e spectral sensi v ity 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 750 8 50 950 1050 1150 - w a v elength (nm) 0.4 0.2 0 s - relati v e sensiti v ity rel 94 8 624 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement
document number: 81503 for technical questi ons, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.7, 16-sep-08 341 BPV10NF silicon pin photodiode, rohs compliant vishay semiconductors package dimensions in millimeters 96 1219 8
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
